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Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain

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5 Author(s)
Guo, X. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Beck, A.L. ; Campbell, Joe C. ; Emerson, D.
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We report spatial nonuniformity of responsivity of 4H-SiC avalanche photodiodes at high gain (M > 1000) that results from variation in the doping density. Two-dimensional raster scans show a steady decline laterally across the device. The direction in which the spatial response decreases is the same as that of increasing breakdown voltage on the wafer.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:41 ,  Issue: 10 )

Date of Publication:

Oct. 2005

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