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A novel dynamic threshold Voltage MOSFET (DTMOS) using heterostructure channel of Si1-yCy interlayer

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4 Author(s)
Ming-Shan Shieh ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Pang-Shiu Chen ; Tsai, M.-J. ; Lei, T.F.

We have demonstrated the fabrication of dynamic threshold voltage MOSFET (DTMOS) using the Si1-yCy(y=0.005) incorporation interlayer channel. Compare to conventional Si-DTMOS, the introduction of the Si1-yCy interlayer for this device is realized by super-steep-retrograde (SSR) channel profiles due to the retardation of boron diffusion. A low surface channel impurity with heavily doped substrate can be achieved simultaneously. This novel Si1-yCy channel heterostructure MOSFET exhibits higher transconductance and turn on current.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 10 )