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The effects of high-pressure annealing on interface properties and charge trapping of nMOSFET with high-κ dielectric were investigated. Comparing with conventional forming gas (H2/Ar=4%/96%) annealed sample, nMOSFET sample annealed in high-pressure (5-20 atm), pure H2 ambient at 400°C shows 10%-15% improvements in linear drain current (Id) and maximum transconductance (gm,max). Interface trap density and charge trapping properties were characterized with charge pumping measurements and "single pulsed" Id-Vg measurements where reduced interface state density and improved charge trapping characteristics were observed after high pressure annealing. These results indicate that high pressure pure hydrogen annealing can be a crucial process for future high-κ gate dielectric applications.