Plasma chemical etching of silicon (optimization of process)

The basic results of plasma etching of silicon in CCl/sub 2/F/sub 2//O/sub 2/ in quartz reactor with teflon polymer by a covering are considered. The inconsistent model of plasma chemical etching (PCE) of silicon in plasma CCl/sub 2/F/sub 2//O/sub 2/ in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer. The deep etching of silicon up to 180 mkm for 30 minutes is carried out. However anisotropy of deep etching of silicon is low.