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Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures

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4 Author(s)
Young, D.K. ; Eng. & Sci. Dept., California Inst. of Technol., Raleigh, NC, USA ; Reynolds, C.L. ; Swaminathan, V. ; Walters, F.S.

It is known that the Zn doping profile in strained multi-quantum-well (MQW) InGaAsP lasers strongly affects the electro-optical characteristics of these devices and their temperature sensitivity. A systematic investigation of the excitation dependence of the active layer photoluminescence (PL) intensity from compressively strained InGaAsP MQW pin laser material with different Zn doping profiles is described. When the pn junction lies within the active region, the excitation dependence of the PL intensity is superlinear at low excitation and linear at higher excitation. As the Zn profile is set back from the heterointerface creating a displaced pn junction from the active region, the excitation dependence is superlinear and linear at 300 K but becomes linear for all excitation powers at 77 K. The implications of these observations are discussed.

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Electronics Letters  (Volume:41 ,  Issue: 18 )