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A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate

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5 Author(s)
R. Difrenza ; STMicroelectronics, Crolles, France and LPCS/ENSERG, Grenoble, France ; P. Llinares ; G. Morin ; E. Granger
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First Page of the Article

Published in:

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Date of Conference:

11-13 September 2001