Skip to Main Content
GaAs TUNNET diodes with 75-nm thick undoped transit-time layer and 14-nm thick n+ electric-field-inducing layer were fabricated with molecular layer epitaxy. They were oscillating in fundamental-mode metal rectangular resonant cavities of WR-1.5 (0.381 × 0.191 mm) and WR-1.2 (0.305 × 0.152 mm) types. Continuous wave generation of -53 dBm to -49 dBm, in the frequency range of 430-510GHz, at the bias current from 500 to 560 mA was obtained in the WR-1.5 cavity. In the WR-1.2 cavity, CW generation in the range of 571-655 GHz was obtained with the bias current changing from 460 to 540 mA. Output power was -61dBm at 655 GHz. Frequency range of CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy extends from 60 GHz (+13 dBm) to 655 GHz.