By Topic

GaAs TUNNETT diodes oscillating at 430-655 GHz in CW fundamental mode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Nishizawa, J. ; Semicond. Res. Inst., Sendai, Japan ; Plotka, P. ; Makabe, H. ; Kurabayashi, T.

GaAs TUNNET diodes with 75-nm thick undoped transit-time layer and 14-nm thick n+ electric-field-inducing layer were fabricated with molecular layer epitaxy. They were oscillating in fundamental-mode metal rectangular resonant cavities of WR-1.5 (0.381 × 0.191 mm) and WR-1.2 (0.305 × 0.152 mm) types. Continuous wave generation of -53 dBm to -49 dBm, in the frequency range of 430-510GHz, at the bias current from 500 to 560 mA was obtained in the WR-1.5 cavity. In the WR-1.2 cavity, CW generation in the range of 571-655 GHz was obtained with the bias current changing from 460 to 540 mA. Output power was -61dBm at 655 GHz. Frequency range of CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy extends from 60 GHz (+13 dBm) to 655 GHz.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:15 ,  Issue: 9 )