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A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation

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8 Author(s)
Wernersson, L.-E. ; Dept. of Electr. Eng., Univ. of Notre Dame, IN, USA ; Kabeer, S. ; Zela, V. ; Lind, E.
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SiGe Esaki diodes have been realized by rapid thermal diffusion of phosphorous into an SiGe layer grown by ultra-high-vacuum chemical-vapor-deposition on an Si p+-substrate for the first time. The phosphorous-doped SiGe forms the n+-electrode, while heavily boron-doped Si0.74Ge0.26 and Si substrate is used for the p+ electrode. The diodes show a peak current density of 0.18 kA/cm2, a current peak-to-valley ratio of 2.6 at room temperature, and they exhibit only a weak temperature dependence. Cross-sectional transmission microscopy showed a good crystalline quality of the strained Si0.74Ge0.26 layer even after the diffusion step at 900°C.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:4 ,  Issue: 5 )

Date of Publication:

Sept. 2005

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