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The piezoelectric characteristics of ZnO films obtained by RF magnetron sputtering in reactive plasma have been researched. ZnO films have been grown on SiO 2/Si (100) substrate using a zinc oxide target. Different RF power and reactive plasma have been tested to obtain a good piezoelectric material for SAW applications. Crystalline structures and morphological characteristics of the films were investigated by x-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. "Al/ZnO/SiO 2-Si" configuration SAW devices were fabricated and characterized by frequency response measurements.