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A high performance CMOS bandgap reference circuits using lateral bipolar transistors is presented. The bandgap reference circuit provides a very small dependence of the reference voltage on temperature. It aims at application in high-resolution temperature-stable analog-digital or digital-analog converters. The reference voltage has a simulated temperature coefficient of 8.3 ppm/°C over the temperature range of -40 to 125 °C at the typical model. The circuit is designed using a standard 0.35 μm CMOS technology. It can be operated under 1.8 V supply, while consuming 210 μW, the die area is 0.045 mm2.