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4H-SiC MOS structures have been implemented using deposited SiO2-TEOS oxides as an innovative gate process fabrication. The effect of SiO2-TEOS post-deposition annealings has been analyzed. The main electrical properties have been extracted pointing out a considerable improvement on the electrical characteristics when the TEOS oxides were annealed at high temperatures. 4H-SiC MOSFETs have been fabricated using these oxides and the experimental results show an improvement of the effective channel mobility (up to 12cm2/Vs) with a significant reduction of the sub-threshold swing.