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A study of the influence of N2O and N2 annealing processes on 4H-SiC MOS structures with deposited TEOS SiO2 as gate oxide

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5 Author(s)
Perez-Tomas, A. ; Centre Nacional de Microelectron., CSIC, Barcelona, Spain ; Godignon, P. ; Mestres, N. ; Tournier, D.
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4H-SiC MOS structures have been implemented using deposited SiO2-TEOS oxides as an innovative gate process fabrication. The effect of SiO2-TEOS post-deposition annealings has been analyzed. The main electrical properties have been extracted pointing out a considerable improvement on the electrical characteristics when the TEOS oxides were annealed at high temperatures. 4H-SiC MOSFETs have been fabricated using these oxides and the experimental results show an improvement of the effective channel mobility (up to 12cm2/Vs) with a significant reduction of the sub-threshold swing.

Published in:

Electron Devices, 2005 Spanish Conference on

Date of Conference:

2-4 Feb. 2005