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Effects of Random Discrete Impurities in Ultra-short MOSFET Using 3D Monte Carlo Simulation

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4 Author(s)
S. Barraud ; IEF-CNRS, Universite Paris sud, Orsay, France ; P. Dollfus ; S. Galdin-Retailleau ; P. Hesto

First Page of the Article

Published in:

Solid-State Device Research Conference, 2002. Proceeding of the 32nd European

Date of Conference:

24-26 September 2002