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An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

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5 Author(s)
Kim, C.H. ; Minnesota Univ., Minneapolis, MN, USA ; Roy, K. ; Hsu, S. ; Krishnamurthy, R.K.
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This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-Vt CMOS technology for accurately measuring process variation. Results based on measured leakage data show higher signal-to-noise ratio and reduced sensitivity to supply and P/N skew variations compared to prior designs.

Published in:

Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on

Date of Conference:

9-11 May 2005