By Topic

Effect of deuterium anneal on thin gate oxide reliability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
G. Cellere ; Dept. of Inf. Eng., Padova Univ., Italy ; A. Paccagnella ; M. G. Valentinr ; M. Alessandri

Several process steps (in particular, those requiring the use of plasma) can lead to severe oxide damage. To reduce the latter, a high temperature anneal is usually performed at the end of the manufacturing process. We are investigating the use of deuterium instead of hydrogen for this anneal step. Anneal in deuterium results in improved passivation of the process-induced damage, and in lower degradation of devices during subsequent electrical stress.

Published in:

2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005.

Date of Conference:

9-11 May 2005