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Fault modeling for physical failures for CMOS circuits

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2 Author(s)
Zaghloul, M.E. ; Dept. of Electr. Eng. & Comput. Sci., George Washington Univ., DC, USA ; Gobovic, D.

The authors propose a fault simulation model for CMOS VLSI circuits which can handle physical faults as gate-to-drain/source shorts. A relation is established between the inverse voltage of a fault-free inverter and the faulty output voltage of a faulty inverter. This relation is then used to study the propagation of the faulty signal through a successive gate.<>

Published in:
Circuits and Systems, 1988., IEEE International Symposium on

Date of Conference: 7-9 June 1988

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