By Topic

Ballistic quantum transport in nano-scale Schottky barrier tunnel transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chiyui Ahn ; Inf. & Commun. Univ., Daejeon, South Korea ; Shin, Mincheol

Nanoscale Schottky barrier tunnel transistors (SBTTs) are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations. We have analyzed the device characteristics of SBTT by varying the device parameters such as the channel length, tunnel barrier height, and gate insulator dielectric constant. We have found that on-current is almost independent of the channel length while off-current drastically increases as the channel length becomes shorter than around 15 nm. Discussions on avoiding such large off-current are presented, in terms of adjusting the Schottky barrier height and using a gate insulator with high dielectric constant.

Published in:

Nanotechnology, 2005. 5th IEEE Conference on

Date of Conference:

11-15 July 2005