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Design of a novel three-valued static memory using Schottky barrier carbon nanotube FETs

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4 Author(s)
Raychowdhury, A. ; Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Guo, Jing ; Roy, K. ; Lundstrom, Mark

This paper proposes a novel three-state memory using scaled Schottky-barrier carbon nanotube field effect transistors (SB CNFETs). The design utilizes the inherent ambipolar device characteristics of the SB CNFET. Simulation results show ∼37% area reduction and ∼30% reduction of total power in a 64 KB memory array.

Published in:

Nanotechnology, 2005. 5th IEEE Conference on

Date of Conference:

11-15 July 2005