Cart (Loading....) | Create Account
Close category search window
 

Contactless electroreflectance study of CdSe/ZnBeSe quantum dots grown by molecular-beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Huang, P.J. ; Dept. of Electron. Eng., Nat. Taiwan Sci. & Technol. Univ., Taipei, Taiwan ; Liu, Y.T. ; Huang, Y.S. ; Munoz, M.
more authors

Contactless electroreflectance was used to investigate the capped CdSe/ZnBeSe and CdSe/ZnSe quantum-dot (QD) structures grown by molecular beam epitaxy on GaAs [001] substrates. The features originating from the QDs transitions for the CdSe QDs sandwiched by ZnBeSe show blue shifts and narrower lineshape as compared to those grown on ZnSe. The blue shifts of the QD transitions are related to the smaller QD size and the slightly higher barrier energy due to the presence of Be, while the smaller broadening parameters indicate the higher uniformity of the QD size distribution of the ZnBeSe sample.

Published in:

Nanotechnology, 2005. 5th IEEE Conference on

Date of Conference:

11-15 July 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.