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High temperature stable n-i-n resonant tunneling diode embedded InAs quantum dots in GaAs/AlxGa1-xAs double barriers

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3 Author(s)
Shiang-Feng Tang ; Div. Mater. & Electro-Opt. Res., Chung-Shan Inst. of Sci. & Technol., Lung-Tan, Taiwan ; Cheng Der Chiang ; Jiunn-Jye Luo

The quantum dot (QD) resonant tunneling diode (RTD) with AlxGa1-xAs double-barriers has been investigated under operating large temperature ranges. A superior temperature-stability of peak-to-valley current ratio (PVR) is demonstrated. The electrons of resonant tunneling transport via nm-scale InAs quantum dots buried in GaAs spacer layers bounded by a pair of very thin Al0.3Ga0.7As barriers.

Published in:

5th IEEE Conference on Nanotechnology, 2005.

Date of Conference:

11-15 July 2005