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Effects of dot height uniformity on the performance of 1.3 μm InAs quantum dot lasers

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3 Author(s)
Liu, Wei-Sheng ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Chang, Holin ; Jen-Inn Chyi

We have systematically investigated the growth parameters of InAs quantum dots (QDs) so as to preserve the uniformity of dot height for 1.3 μm QD laser diodes. Devices that are prepared using the optimized growth conditions exhibit threshold current as low as 50 mA, and internal quantum efficiency as high as 63% under continuous-wave operation.

Published in:

Nanotechnology, 2005. 5th IEEE Conference on

Date of Conference:

11-15 July 2005