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Fabrication and electrical transport properties of nickel monosilicide nanowires

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4 Author(s)
Sheu, J.-T. ; Inst. of Nanotechnol., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Yeh, S.P. ; Tsai, S.T. ; Lien, C.H.

Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin nickel films (∼50 nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N2 ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared.

Published in:

Nanotechnology, 2005. 5th IEEE Conference on

Date of Conference:

11-15 July 2005

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