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The effect of device geometry on the static and dynamic response of carbon nanotube field effect transistors

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5 Author(s)
Pourfath, M. ; Inst. of Microelectron., Vienna, Austria ; Kosina, H. ; Cheong, B.H. ; Park, W.J.
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A numerical study of ohmic contact carbon nanotube field effect transistors is presented. The effect of the gate-source and gate-drain spacers on the static and dynamic response of the device was studied. Simulation results suggest that by appropriately selecting the gate-source and gate-drain spacers both the dynamic and static characteristics of the device are improved.

Published in:

Nanotechnology, 2005. 5th IEEE Conference on

Date of Conference:

11-15 July 2005