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Transport properties of ultra thin oxide gated Si SET near room temperature

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4 Author(s)
Yue-Min Wan ; Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan ; Kuo-Dong Huang ; Ching-Lung Sung ; Hu, Shu-Fen

We have fabricated ultrathin oxide (thickness) of ∼6 nm gated silicon transistors with a point-contact junction of ∼20 nm thick, and 20 nm wide to explore single electron charging effects near room temperature. Current-voltage (I-V) measurements show clear periodic oscillations and a dramatic collapse of peak's maximum at various temperatures. Analysis of energy spacing relates the charging energy to a dot of ∼8 nm in size and also suggesting tunneling is via the first excited state. These low-power ∼30 pW and low cost devices can be very useful for the next generation nanoelectronics.

Published in:

Nanotechnology, 2005. 5th IEEE Conference on

Date of Conference:

11-15 July 2005

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