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Antiguiding index profiles in broad strip semiconductor lasers for high-power, single-mode operation

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3 Author(s)
Chan, A.K. ; Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA ; Lai, C.P. ; Taylor, H.F.

Solutions to the wave equations for a one-dimensional quadratic variation in the complex refractive index profile are used to calculate gain and field distributions for the lateral modes of broad-stripe semiconductor lasers. It is found that a large difference in gain between the fundamental mode and higher-order modes is obtained in profiles with strong real-index antiguiding and weak imaginary-index guiding. The effect of truncating the quadratic profile is explored. A criterion for comparing the tendency for single-mode operation in different index profiles is introduced and applied to quadratic, step, and array profiles. Based on the analysis, device structures for achieving high-power, single-mode operation are proposed.<>

Published in:

Quantum Electronics, IEEE Journal of  (Volume:24 ,  Issue: 3 )