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Novel electro-chemical mechanical planarization using carbon polishing pad to achieve robust ultra low-k/Cu integration

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8 Author(s)
Kondo, S. ; Semicond. Leading Edge Technol., Inc., Ibaraki, Japan ; Tominaga, S. ; Namiki, A. ; Yamada, K.
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We developed a novel electro-chemical mechanical planarization (e-CMP) method that uses a conductive carbon pad for polishing 300-mm wafers. More than one hundred electro-cells were fabricated into the carbon pad, and the method resolved issues with conventional e-CMP, such as scratching caused by metal electrodes, copper residues, and process complexity of cathode regeneration. By using an e-CMP process followed by TaN-CMP, porous low-k/Cu interconnects were successfully fabricated.

Published in:

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Date of Conference:

6-8 June 2005