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Supercritical CO2 clean with novel solution for 65 nm and beyond BEOL performance improvement

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18 Author(s)
Tseng, W.H. ; Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan ; Yang, C.M. ; Wu, W.J. ; Wang, C.Y.
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Supercritical CO2 (SCCO2) clean/modification performance on a 300 mm tool with promising physical, electrical and reliability results for 65 nm low k dual damascene is successfully demonstrated in this work. The process is optimized to remove post-ash residues and modify the dielectric film damaged by O2 plasma ash. The low-k value dielectric (LKD) surface is modified from hydrophilic to hydrophobic by the SCCO2 treatment. Dielectric constant measurements before and after treatment show effective modification only on porous CVD LKD films. Leakage performance with 55% reduction and capacitance performance with 11% reduction by the process with respect to the conventional process demonstrate the benefits. The process is compatible with the 8 layer scheme. Promising electro-migration (EM), stress migration (SM) performance and better time-dependent dielectric breakdown (TDDB) results indicate that the process is more robust than the conventional one for future interconnects. For 65 nm generation and beyond, SCCO2, clean/modification is demonstrated as a promising solution for Cu/low k integration.

Published in:

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Date of Conference:

6-8 June 2005