Cart (Loading....) | Create Account
Close category search window
 

Off-state current and performance analysis for double-gate CMOS with non-self-aligned back gate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Keunwoo Kim ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Hanafi, H.I. ; Jin Cai ; Ching-Te Chuang

Numerical simulation-based study of double-gate (DG) field-effect transistors (FETs) leads to the possibly viable concept of extremely scaled but nonself-aligned DG CMOS. Predictions of off-state current, on-state current, and circuit performance, accounting for short-channel effects and energy-quantization effects, in 25-nm DG FETs suggest that moderate back-gate underlap does not severely undermine the superior performance and leakage current of nanoscale DG CMOS relative to those of bulk-Si CMOS. The reverse back-gate biasing scheme for leakage reduction in DG CMOS is shown to be much more efficient than the reverse body biasing scheme in bulk Si even with moderate back-gate underlap.

Published in:

Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 9 )

Date of Publication:

Sept. 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.