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1.0 GHz monolithic p-i-n MODFET photoreceiver using molecular beam epitaxial regrowth

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8 Author(s)
P. R. Berger ; AT&T Bell Lab., Murray Hill, NJ, USA ; N. K. Dutta ; D. A. Humphrey ; P. R. Smith
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A single-stage integrating front-end photoreceiver comprising a p-i-n In/sub 0.53/Ga/sub 0.47/As photodiode integrated with a selectively regrown pseudomorphic In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As MODFET using MBE regrowth was investigated. Cutoff frequencies of the 1.0- mu m regrown MODFETs were f/sub t/=24 GHz and f/sub max/=50 GHz. Transconductances of the regrown MODFETs were as high as 495 mS/mm with a current density (I/sub ds/) of 250 mA/mm. The 3-dB bandwidth of the photoreceiver was measured to be 1 GHz. The bit rate sensitivity at 1 Gb/s was -29.6 dBm for BER 10/sup -9/ using 1.55- mu m excitation. The single-stage amplifier exhibited up to 25 dB of flatband gain of the photocurrent.<>

Published in:

IEEE Photonics Technology Letters  (Volume:4 ,  Issue: 8 )