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Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels

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7 Author(s)
Yung-Chun Wu ; Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Chang, Ting-Chang ; Liu, Po-Tsun ; Cheng-Wei Chou
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This letter addresses the leakage current in nickel (Ni) metal-induced lateral crystallization (Ni-MILC) polysilicon thin-film transistors (poly-Si TFTs) with multiple nanowire channels and dual-gate. Experimental results reveal that applying multiple nanowire channels improves the Ni-MILC poly-Si TFT performance. However, the leakage current of both single-gate with single-channel and multiple nanowire channels remains high (>10-8 A), because of the field emission of carriers through the poly-Si grain traps and the defects caused by Ni contamination. Applying the dual-gate structure can suppress the electrical filed in the drain depletion region, significantly reducing the leakage current of the Ni-MILC poly-Si TFT, increasing the ON/OFF ratio.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 9 )