Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was$sim 1072 hbox cm^2/hbox V cdot hbox s$, which is$sim$35% higher than that extracted from reported “universal curve” for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At$sim 243 hbox cm^2/hbox V cdot hbox s$, no enhancement in hole effective mobility was observed.