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Characteristics of Transistors Fabricated on Silicon-on-Quartz Prepared Using a Mechanically Initiated Exfoliation Technique

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5 Author(s)
Xuejie Shi ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Henttinen, K. ; Suni, T. ; Suni, I.
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Single-crystalline silicon thin film on fused quartz (SOQ) was prepared using a technique based on wafer bonding and mechanically initiated exfoliation. MOSFETs fabricated on the resulting SOQ were characterized. The measured low-field electron effective mobility was$sim 1072 hbox cm^2/hbox V cdot hbox s$, which is$sim$35% higher than that extracted from reported “universal curve” for electron effective mobility. Consistent with the mobility enhancement, a tensile strain of 0.25% in the SOQ was deduced from Raman spectroscopy. At$sim 243 hbox cm^2/hbox V cdot hbox s$, no enhancement in hole effective mobility was observed.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 9 )