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DNA sequencing using genetic field effect transistor

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2 Author(s)
Sakata, T. ; Biomaterials Center, National Inst. for Mater. Sci., Ibaraki, Japan ; Miyahara, Y.

We have proposed a novel field effect transistor (FET) in combination with single-base extension for a direct, simple and non-labeled DNA sequencing, which is based on detection of molecular recognition at the gate insulator by the field effect. The intrinsic negative charges generated by DNA polymerase-assisted incorporation of deoxynucleotides can be transduced directly into electrical signal. Here, we demonstrate that single-base extension at the gate surface can be detected directly as a shift of the threshold voltage of the FET. Moreover, it was possible to determine the base sequence of the target DNA by the iterative cycles of single-base extension with each deoxynucleotides and measurement of the threshold voltage.

Published in:

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on  (Volume:2 )

Date of Conference:

5-9 June 2005