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Hot-carrier degradation on the analogue/RF performances of a 90nm RF-CMOS technology demonstrated in a 900MHz low-power LNA

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10 Author(s)
J. Ramos ; Inter-Univ. Micro-Electron. Center, Leuven, Belgium ; W. Jeamsaksiri ; A. Mercha ; S. Thijs
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Hot-carrier stress impact on the analogue/RF performances of a state-of-the-art 90nm RF-CMOS technology, demonstrated on RF-circuits operating up to 5Ghz, is shown for the first time in a 900MHz LNA biased in moderate inversion. The trade-off between low-power consumption and lifetime is discussed, addressing limitations and pointing to possible solutions.

Published in:

IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech).

Date of Conference:

25-27 April 2005