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A lateral field-emission RF MEMS device [resonator filter applications]

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5 Author(s)
K. Yamashita ; Inst. of Ind. Sci., Univ. of Tokyo, Japan ; W. Sun ; K. Kakushima ; H. Fujita
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We present the concept, fabrication, simulation, and experimental result of a field emission RF MEMS device based on SOI technology. The objective of this project is to enable RF filtering by means of a mechanical resonator. Current results include: (1) successful demonstration of the field emission effect on a reference device between silicon tips at ∼5 μm gap distance below 2×10-8 torr high vacuum environment; and (2) sacrificial release of the 2nd generation device with integrated micro-oscillator.

Published in:

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.  (Volume:1 )

Date of Conference:

5-9 June 2005