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Optical MEMS technology is attractive for miniaturizing several optical systems. On the other hand, GaN is a new and powerful material for photonic devices such as light emitting and laser diodes. We are studying GaN film grown on Si substrate for the optical MEMS application in order to fabricate monolithic structure. In this paper, a subwavelength optical MEMS is proposed and the characteristics of GaN film grown on Si substrate by MBE are reported. The surface morphology of the grown GaN film is measured by electron microscopy and atomic force microscopy. Photoluminescence and X-ray diffraction measurements are also carried our under several growth conditions. Furthermore, a preliminary grating structure is fabricated for the MEMS application.