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Highly sensitive electron-emission-type infrared sensor using a single crystalline LiNbO3

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4 Author(s)
Takamuro, D. ; Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan ; Takao, H. ; Sawada, K. ; Ishida, M.

We propose a new electron-emission-type infrared light sensor and imager, which uses the principle of electron emission from a ferroelectric material. Previously, we reported that the electron emission current was proportional to the incident infrared light energy and 30% of the pyroelectric current was emitted to the vacuum (Tomita, K. et al., Sensors and Actuators, vol.97-8, p.147-52, 2002). The electron-emission-type infrared sensor is improved by using a single crystalline LiNbO3 and a secondary electron multiplying device. This type of sensor was proposed and demonstrated previously using Pb(Zr,Ti)O3 (PZT). The response speed increased to 1.5 times that of PZT. On a pulsed infrared irradiation condition, this sensor achieved infrared light sensitivity of 41 nA/W without multiplication of the emission electrons. It is expected that electrons can be supplied to the surface from the comb-type electrode. The electron emission current was measured, and the peak current did not change during a continuous detection operation. In the low incident light condition, an emission pattern was confirmed by multiplication of emission electrons. This image was caused by the pyroelectric charge from LiNbO3.

Published in:

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on  (Volume:1 )

Date of Conference:

5-9 June 2005