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In this paper, we report that a pyroelectric infrared (IR) sensor with fast response time and high sensitivity using epitaxial Pb(Zr,Ti)O3 (PZT) thin films on epitaxial γ-Al2O3/Si substrates has successfully fabricated for the first time. The fabricated sensor operated under chopping frequency of 100 Hz. The values of output signals were 1.6 mVp-p, 0.8 mVp-p and 0.5 mVp-p with the chopping frequencies of 20 Hz, 50 Hz and 100 Hz, respectively. This sensor has potential for Si integrated sensing systems and is compared with pyroelectric IR sensors using MgO substrates.