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Modeling and simulation of inner defect in impulse storage capacitor

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2 Author(s)
Xueqin Zhang ; Sch. of Electr. Eng., Southwest Jiaotong Univ., Chengdu, China ; Guangning Wu

Because of big capability and small volume, impulse storage capacitor was found that the fast impulse would do much damage to capacitor insulation. Based on the electrical discharge mechanism, several classical defects of capacitor were put forward in this paper. To estimate the status of insulation, the electrical field distribution of defects should be analyzed carefully. As the most popular defect in storage capacitor, inner defect models had been designed for FEA (finite element analysis). Through simulation and analysis, the result proved that the different size and location of inner defect in insulation would result in dissimilar partial concentration and aberrance of electrical field distribution.

Published in:

Electrical Insulating Materials, 2005. (ISEIM 2005). Proceedings of 2005 International Symposium on  (Volume:3 )

Date of Conference:

5-9 June 2005