By Topic

On the Potential of SiGe HBTs for Extreme Environment Electronics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
J. D. Cressler ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

"Extreme environments" represents an important niche market for electronics and spans the operation of electronic components in surroundings lying outside the domain of conventional commercial, or even military, specifications. Such extreme environments would include, for instance, operation to very low temperatures (e.g., to 77 K or even 4.2 K), operation at very high temperatures (e.g., to 200°C or even 300°C), and operation in a radiation-rich environment (e.g., space). We argue that the unique bandgap-engineered features of silicon-germanium heterojunction bipolar transistors offer great potential to simultaneously satisfy all three extreme environment applications, potentially with little or no process modification, ultimately providing compelling cost advantages at the IC and system level.

Published in:

Proceedings of the IEEE  (Volume:93 ,  Issue: 9 )