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We have investigated the depletion voltage changes, leakage current increase and charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BABAR Silicon Vertex Tracker (SVT) after heavy nonuniform irradiation. A full SVT module with the front-end electronics connected has been irradiated with a 0.9 GeV electron beam up to a peak fluence of 3.5 , well beyond the level causing substrate type inversion. We have irradiated the silicon with a nonuniform profile having that simulates the conditions encountered in the BAB AR experiment by the modules intersecting the horizontal machine plane. The position dependence of the charge collection properties and the depletion voltage have been investigated in detail using a 1060 nm LED and an innovative measuring technique based only on the digital output of the chip.