Study of N-channel MOSFETs with an enclosed-gate layout in a 0.18 /spl mu/m CMOS technology

Enclosed-gate layout MOSFETs with guard rings have been fabricated in a commercial 0.18 /spl mu/m complementary metal-oxide-semiconductor technology. The static, small signal, and noise performance of the MOSFETs were determined before and after being subjected to ionizing radiation. The transistor design could provide the basis for low-noise radiation-tolerant circuits.