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A novel united analytical model for the potential and the electric field distribution of TFSOI power device with a uniform or linear doping is proposed. The interface charges in the interface of Si/field oxide and Si/buried oxide are taken into account in the model. Based on the 2D Poisson equation, the analytical solutions for the surface potential and electric field distribution are investigated for different device structure parameters. The validity of this model is verified by comparison with the numerical results by 2D device simulator MEDICI.