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Transverse-mode stabilised 630 nm-band AlGaInP strained multiquantum-well laser diodes grown on misoriented substrates

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5 Author(s)
Honda, S. ; Sanyo Electr. Co. Ltd., Osaka, Japan ; Hamada, H. ; Shono, M. ; Hyroyama, R.
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Transverse-mode stabilised AlGaInP ( lambda L=638 nm) compressively strained multiquantum-well laser diodes have been successfully fabricated by MOCVD using

Published in:

Electronics Letters  (Volume:28 ,  Issue: 14 )

Date of Publication:

2 July 1992

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