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An AND-type match-line scheme for energy-efficient content addressable memories

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4 Author(s)
Jinn-Shyan Wang ; Nat. Chung Cheng Univ., Chai-Yi, Taiwan ; Hung-Yu Li ; Chia-Cheng Chen ; Chingwei Yeh

An AND-type match-line scheme is fabricated in a 0.18 μm 1.8V CMOS process. The 256×128b CAM achieves a faster search time and a 20% energy reduction compared with NOR designs. This AND-type circuit has a search time of 1.75ns with an energy of 0.57fJ/bit/search.

Published in:

Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Date of Conference:

10-10 Feb. 2005

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