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Megapixel CMOS image sensor fabricated in three-dimensional integrated circuit technology

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18 Author(s)
V. Suntharalingam ; Lincoln Lab., MIT, Lexington, MA, USA ; R. Berger ; J. A. Burns ; C. K. Chen
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A 1024×1024 integrated image sensor with 8 μm pixels, is developed with 3D fabrication in 150 mm wafer technology. Each pixel contains a 2 μm×2 μm×7.5 μm 3D via to connect a deep depletion, 100% fill-factor photodiode layer to a fully depleted SOI CMOS readout circuit layer. Pixel operability exceeds 99.9%, and the detector has a dark current of <3 nA/cm2 and pixel responsivity of ∼9 μV/e at room temperature.

Published in:

ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005.

Date of Conference:

10-10 Feb. 2005