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A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor

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6 Author(s)
Sugawa, S. ; Tohoku Univ., Miyagi, Japan ; Akahane, N. ; Adachi, S. ; Mori, K.
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The wide DR CMOS image sensor incorporates a lateral overflow capacitor in each pixel to integrate the overflow charges from the photodiode when it saturates. The 7.5×7.5 μm2 pixel, 1/3" VGA sensor fabricated in a 0.35 μm 3M2P CMOS process achieves a 100 dB dynamic range with no image lag, 0.15 mVrms random noise and 0.15 mV fixed pattern noise.

Published in:

Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Date of Conference:

10-10 Feb. 2005