Referenced Items are not available for this document.
A CMOS image sensor with 117 dB DR is demonstrated in a 0.25 μm CMOS technology through merging of multiple exposures. A 12b cyclic ADC with integrated noise canceling is implemented in the column of the image sensor and achieves a DNL of +0.4/-0.8 LSB.
Published in:
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Date of Conference: 10-10 Feb. 2005
- Page(s):
- 350 - 603 Vol. 1
- ISSN :
- 0193-6530
- Print ISBN:
- 0-7803-8904-2
- INSPEC Accession Number:
- 8652723
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/ISSCC.2005.1494013
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
