Nano-wires for room temperature operated hybrid CMOS-NANO integrated circuits

N-doped polysilicon gated-nanowires (poly-SiNW) are reported. The V-shape and hysteresis of their I-V characteristics are used to build analog and memory circuit cells. Integration of the poly-SiNW in CMOS is demonstrated. A precise current-measurement application with 1pA resolution and negative differential resistor is reported. A nanoscale capacitor-less hysteresis memory cell using constant-current biased poly-SiNW is designed and experimentally validated.