Cart (Loading....) | Create Account
Close category search window
 

1.3 mu m InGaAsP Fabry-Perot lasers with reduced pulse jitter and power penalty

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Cheng, W.H. ; Alcatel Network Syst., Richardson, TX, USA ; Dugan, J.M. ; Miller, J.C. ; Renner, D.
more authors

The pulse jitter and bit-error-rate performances of a 1.2 Gbit/s lightwave transmission system using 1.3 mu m InGaAsP Fabry-Perot (FP) lasers with Zn-doped active layers were investigated experimentally. It was found that the pulse jitter and the resulting power penalty were strongly dependent on the carrier lifetime of the lasers. This suggests that doped-active FP lasers with decreased carrier lifetime may be usable in a wider range of gigabit lightwave applications than previously considered.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 14 )

Date of Publication:

2 July 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.