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A 125 MHz burst-mode flexible read-while-write 256 Mbit 2b/c 1.8V NOR flash memory

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21 Author(s)
Villa, C. ; ST-Microelectron., Agrate Brianza, Italy ; Vimercati, D. ; Schippers, S. ; Confalonieri, E.
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A 1.8 V 256 Mb 2b/cell NOR flash memory is designed in a 130 nm technology. A fast gate-voltage-ramp constant-current-reading concept is implemented to obtain a robust read-while-write/erase function and 125 MHz burst read frequency.

Published in:

Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Date of Conference:

10-10 Feb. 2005