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A 128 Mb NOR flash memory with 3 MB/s program time and low-power write performance by using in-package inductor charge-pump

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7 Author(s)
Sundaram, R. ; Intel Corp., Folsom, CA, USA ; Javanifard, J. ; Walimbe, P. ; Pathak, B.M.
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Improved performance of flash memories requires programming more cells in parallel. This design uses an inductive pump to transfer the energy to a capacitor to achieve the needed voltage. The discrete inductor is bonded atop the die which also includes the control circuitry. With an inductive pump, the current saving in the program mode is 47.5 mA compared to a capacitive pump.

Published in:
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International

Date of Conference: 10-10 Feb. 2005

Page(s):
50 - 584 Vol. 1
ISSN :
0193-6530
Print ISBN:
0-7803-8904-2
INSPEC Accession Number:
8643454
Conference Location :
San Francisco, CA
Digital Object Identifier :
10.1109/ISSCC.2005.1493863
Product Type:
Conference Publications

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